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晶体种类: | 拓扑材料, 红外材料 |
纯度: | >99.999 % |
表征方法: | EDS,SEM,Raman |
bandgap: | 0.4 eV |
更多信息: | 请咨询:sales@6carbon.com
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1, Guo, Pengsheng, et al. "Strong anisotropy and layer-dependent carrier mobility of two-dimensional semiconductor ZrGeTe 4." Journal of Physics: Condensed Matter (2020).
2, Sheeba, R. A. J. R., S. Israel, and S. Saravanakumar. "Investigation of the van der Waals epitaxy gap in isostructural semiconducting germanium tellurides: HfGeTe4 and ZrGeTe4." Chinese Journal of Physics 54.5 (2016): 668-677.
3,Sheeba, R. A. J. R., S. Israel, and S. Saravanakumar. "Investigation of the van der Waals epitaxy gap in isostructural semiconducting germanium tellurides: HfGeTe4 and ZrGeTe4." Chinese Journal of Physics 54.5 (2016): 668-677.




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