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晶体种类: | 半导体,红外材料,拓扑材料 |
纯度: | >99.999 % |
表征方法: | EDS,SEM,Raman |
禁带宽度: | 0.5eV |
注意事项: | 表面易氧化 |
参考文献
1, Bandurin, Denis A., et al. "High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe." Nature nanotechnology 12.3 (2017): 223.
2,Mudd, Garry W., et al. "Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement." Advanced MaterialsTamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806. 25.40 (2013): 5714-5718.
3,Tamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806.
4,Lei, Sidong, et al. "An atomically layered InSe avalanche photodetector." Nano letters 15.5 (2015): 3048-3055.





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深圳六碳科技有限公司(Six Carbon Technology)生产科研用的二维纳米材料(CVD薄膜,二维晶体材料,超高纯二维粉体材料等),如二硫化钼,二硫化钨,二硒化钼,二硒化钨,石墨烯,六方氮化硼等。也可以根据实验需要提供定制化的产品及其他复合二维材料,可以根据需要定制上述二维薄膜材料的异质结等。